作者: Mitsuru Funato , Takeshi Kondou , Keita Hayashi , Shotaro Nishiura , Masaya Ueda
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摘要: Monolithic polychromatic light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth SiO2 mask stripes along the [1100] direction and consists of (0001) {1122} facets. LEDs exhibit emission, including white, due to additive color mixture facet-dependent emission colors. Altering growth conditions geometry easily controls apparent color. Furthermore, simulations predict high light extraction efficiencies their three-dimensional structures. Those observations suggest that proposed phosphor-free may lead highly efficient solid-state lighting in which spectra sources synthesized satisfy specific requirements for illuminations.