Analysis of Crosstalk in Very High-Speed LSI/VLSI's Using a Coupled Multiconductor MIS Microstrip Line Model

作者: S. Seki , H. Hasegawa

DOI: 10.1109/TMTT.1984.1132920

关键词:

摘要: Crosstalk in very high-speed LSI/VLSI's is analyzed using a coupled multiconductor metal-insulator-semiconductor (MIS) microstrip line model. Loss the substrate ignored for simplicity. A periodic boundary condition used, and mode analysis done Green's function method. Effects of length spacing, thickness, output impedance gates are investigated. The "lumped capacitance" approximation interconnections shown to be inadequate crosstalk evaluation when circuit speed less than 200-300 ps LSI circuits. result indicates that considerations based on transmission-line model important design LSI/VLSI circuits, Provisions adjacent shield lines significantly effective reducing but at risk dynamic ringing sacrifice wiring capacity. shielded multilevel interconnect scheme proposed reduction without

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