作者: S.H. Lewis , H.S. Fetterman , G.F. Gross , R. Ramachandran , T.R. Viswanathan
DOI: 10.1109/4.121557
关键词:
摘要: A 10-b 20-Msample/s analog-to-digital converter fabricated in a 0.9- mu m CMOS technology is described. The uses pipelined nine-stage architecture with fully differential analog circuits and achieves signal-to-noise-and-distortion ratio (SNDR) of 60 dB full-scale sinusoidal input at 5 MHz. It occupies 8.7 mm/sup 2/ dissipates 240 mW. >