Method for vapor deposition
作者： Roger Hamamjy , Andreas Hegedus , Gregg Higashi , Khurshed Sorabji , Gang He
DOI:
关键词:
摘要: Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method processing wafer within reactor is provided which includes heating at least disposed on carrier by exposing lower surface radiation emitted from lamp assembly and flowing liquid through passageway extending throughout maintain lid predetermined temperature, such as range about 275° C. 325° The further traversing along track chamber containing showerhead an isolator another exhaust assembly, removing gases assembly.
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