Magneto-Coulomb effect in spin-valve devices
作者： S. J. van der Molen , N. Tombros , B. J. van Wees
DOI: 10.1103/PHYSREVB.73.220406
关键词:
摘要: We discuss the influence of magneto-Coulomb effect (MCE) on magnetoconductance spin-valve devices. show that MCE can induce magnetoconductances several percent or more, depending strength Coulomb blockade. Furthermore, MCE-induced changes sign as a function gate voltage. emphasize importance separating conductance induced by from those due to spin accumulation in
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