On conditions leading to crossing of I–V curve in metal1|mixed-ionic–electronic-conductor|metal2 devices

摘要: Abstract Many experimental and some theoretical studies on two terminal devices in the form metal1|semiconductor|metal2 report unusual I–V relations which exhibit hysteresis crossing of curve under periodic applied voltage. It is believed that semiconductors allow also for motion ionic defects they are thus, mixed-ionic–electronic-conductors (MIECs). The device simulated here metal1|MIEC|metal2 where thin semiconductor layer n-type donors mobile. voltage periodic. limited so temperature constant. conduction electrons coupled to mobile via Poisson equation thus redistribution an leads dramatic changes device's resistance. considered native ones electrodes exchange matter with surroundings affects relations. results suggest a necessary condition asymmetry or