Ion implanted substrate having capping layer and method
作者： Robert Schreutelkamp , Jose Ignacio Del Agua Borniquel , Tze Poon , Majeed Foad
DOI:
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摘要: In an ion implantation method, a substrate is placed in process zone and ions are implanted into region of the to form region. A porous capping layer deposited on The annealed volatize at least 80% overlying during annealing process. An intermediate product comprises substrate, plurality regions covering regions.
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