Continuous burst edo memory device
作者： Timothy B. Cowles
DOI:
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摘要: An integrated circuit memory device is described which can operate at high data speeds. The either store or retrieve from the in a burst access operation. operations latch address external lines and internally generates additional addresses. output continuous stream while new rows of are accessed. A method for outputting stored first row accessing second memory.
google.com.mx 参考文章(72)
Neal D. Margulis, Takatoshi Ishii, Burst-mode DRAM ,(1993)
Anthony M. Olson, Thomas N. Robinson, Babu Rajaram, Main memory access in a microprocessor system with a cache memory ,(1987)
Robert D. Catiller, Testing system for reliable access times in ROM semiconductor memories ,(1983)
Narasimhan Iyengar, A read/write memory with interlocked write control ,(1992)
Yoshinori Inoue, Takahiko Fukiage, Semiconductor memory device with changeable input/output data bit arrangement ,(1993)
Raymond Pinkham, Separately addressable memory arrays in a multiple array semiconductor chip ,(1985)
Paul A. Santeler, Gary W. Thome, Lee B. Hinkle, John A. Landry, David R. Wooten, Memory controller that dynamically predicts page misses ,(1995)
Loren L. McLaury, Pipelined SAM register serial output ,(1991)
Donald M. Morgan, Memory circuit with foreshortened data output signal ,(1993)
Elvan S. Young, Philip L. Craine, Architecture for high speed contiguous sequential access memories ,(1990)