High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications
Sanghun Jeon Youngin Goh , Junghyeon Hwang , Minki Kim , Minhyun Jung
International Electron Devices Meeting (IEDM)
2021
Impact of oxygen incorporation at the Sl3N4
MAN CHANG , Yongkyu JU , Joonmyoung LEE , Seungjae JUNG
Applied physics letters 93 ( 2)
2008
A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage
JEON Sanghun , KANG Changseok , ROH Ukjin , LEE Chang-Hyun
Extended abstracts of the... Conference on Solid State Devices and Materials 2006 560 -561
2006
High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices
CHOI Sangmoo , JANG Man , PARK Hokyung , JEON Sanghun
Extended abstracts of the... Conference on Solid State Devices and Materials 2004 652 -653
2004
High Quality Ultrathin TaO_xN_y Gate Dielectric Prepared by Nitridation of Ta_2O_5
JUNG Hyungsuk , IM Kiju , JEON Sanghun , YANG Dooyoung
Extended abstracts of the... Conference on Solid State Devices and Materials 2000 236 -237
2000
Microstructured Multi-functional Field-effect Transistors Highly Responsive to Pressure and Temperature for Bio-monitoring
Do-Il Kim , Jihyun Bae , Byeong-Ung Hwang , Sanghun Jeon
한국진공학회 학술발표회초록집 274 -274
2015
Memory device including a dielectric multilayer structure and method of fabricating the same
Chung-woo Kim , Sanghun Jeon , Hyunsang Hwang
10
2005
Non-volatile memory device having an asymmetrical gate dielectric layer and method of manufacturing the same
Sanghun Jeon , Soodoo Chae , Jeong Han
7
2005
Flexible bimodal sensor
Doil Kim , Jihyun Bae , Sanghun Jeon , Nae-eung Lee
4
2017
The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia
Sanghun Jeon , Dipjyoti Das , Youngin Goh , Junghyeon Hwang
IEEE Transactions on Electron Devices 68 ( 2) 523 -528
4
2021
Ferroelectricity in Al2O3/Hf0.5Zr0.5O2 Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature
Venkateswarlu Gaddam , Sanghun Jeon , Dipjyoti Das
Journal of Semiconductor Technology and Science 21 ( 1) 62 -67
1
2021
Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation
Seungbum Hong , Sanghun Jeon , Won-June Lee , Myung-Han Yoon
ACS Applied Electronic Materials 3 ( 3) 1244 -1251
11
2021
High‐Performance and High‐Endurance HfO2‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel
Sanghun Jeon , Taeho Kim , Minhyun Jung , Junghyeon Hwang
Physica Status Solidi-rapid Research Letters 15 ( 5) 2100018
2021
Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H2O2 Oxidant
Changdeuck Bae , Hyoungkyu Kim , Seungbum Hong , Sanghun Jeon
Physica Status Solidi-rapid Research Letters 15 ( 5) 2100020
2021
Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer
Sanghun Jeon , Hongrae Joh , Taeseung Jung
IEEE Transactions on Electron Devices 68 ( 5) 2538 -2542
11
2021
3.1:Invited Paper: Amorphous Oxide TFTs: Progress and Issues
U-In Chung , Arokia Nathan , Sungsik Lee , Sanghun Jeon
SID Symposium Digest of Technical Papers 43 ( 1) 1 -4
26
2012
25.2: Photo-Sensor Thin Film Transistor based on Double Metal-Oxide Layer for In-cell Remote Touch Screen
Seung-eon Ahn , Sanghun Jeon , Ihun Song , Yongwoo Jeon
SID Symposium Digest of Technical Papers 43 ( 1) 334 -337
10
2012
Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications
Sanghun Jeon , Sungho Park , Ihun Song , Ji-Hyun Hur
ACS Applied Materials & Interfaces 3 ( 1) 1 -6
77
2011
Effects of High-Pressure Deuterium Annealing on Nonvolatile Memory Device with Silicon Nanocrystals Embedded in Silicon Nitride
Sangmoo Choi , Sungkweon Baek , Man Jang , Sanghun Jeon
Journal of The Electrochemical Society 152 ( 5)
10
2005
Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode
Youngin Goh , Sung Hyun Cho , Sang-Hee Ko Park , Sanghun Jeon
Nanoscale 12 ( 16) 9024 -9031
67
2020