Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication

摘要: The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls MR opposing layer are formed by over etching to provide vertical side walls without taper. protective is protect it during etch processes. some embodiments, filler deposited prior formation. CIP any portion forming on etched exposed wall surface for contiguous CPP forms back electrically insulates from layer. tapered portions material, which form overhanging element, removed directional improve direction stability induced longitudinal field within element. overhang removal allows formation lead structures, may be closer walls, not pinched off underlying layer, thus improving current density profile definition actual effective track width device.