Influences on ionization fraction in an inductively coupled ionized physical vapor deposition device plasma

摘要: A computer simulation was created to model the transport of sputtered atoms through an ionized physical vapor deposition (IPVD) system. The combines Monte Carlo and fluid methods track metal that are emitted from target, interact with IPVD plasma, eventually deposited somewhere in Ground-state neutral, excited, tracked. requires plasma conditions be specified by user. Langmuir probe measurements were used determine these parameters experimental system order compare results experiment. primary product is a prediction ionization fraction atom flux at substrate under various conditions. This quantity experimentally measured compared simulation. Experiment differ significantly. It hypothesized heating background gas due intense target primarily responsible for this difference. Heating not accounted Difficulties accurately measuring parameters, especially electron temperature, also significant.