Overview of electroceramic materials for oxide semiconductor thin film transistors
作者： Jin-Seong Park , H. Kim , Il-Doo Kim
DOI: 10.1007/S10832-013-9858-0
关键词:
摘要: … discussing current issues impacting oxide-semiconductor TFTs… , we briefly review the TFT and its operating characteristics to … current and therefore power dissipation during the off state. …
springer.com
paperity.org
cyberleninka.org
core.ac.uk 参考文章(157)
Dong Hun Kim, Nam Gyu Cho, Ho-Gi Kim, Hyun-Suk Kim, Jae-Min Hong, Il-Doo Kim, Low voltage operating InGaZnO4 thin film transistors using high-k MgO–Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate Applied Physics Letters. ,vol. 93, pp. 032901- ,(2008) , 10.1063/1.2954014
Yeon-Keon Moon, Sih Lee, Do-Hyun Kim, Je-Hun Lee, Chang-Oh Jeong, Jong-Wan Park, Characteristics of ZnO-based TFT Using La2O3 High-k Dielectrics Journal of the Korean Physical Society. ,vol. 55, pp. 1906- 1909 ,(2009) , 10.3938/JKPS.55.1906
Hyun-Suk Kim, Ho-Gi Kim, Il-Doo Kim, Ki-Byoung Kim, Jong-Chul Lee, High-tunability and low-microwave-loss Ba0.6Sr0.4TiO3 thin films grown on high-resistivity Si substrates using TiO2 buffer layers Applied Physics Letters. ,vol. 87, pp. 212903- ,(2005) , 10.1063/1.2133888
Dong Hun Kim, Hyungtak Seo, Kwun-Bum Chung, Nam Gyu Cho, Ho-Gi Kim, Il-Doo Kim, InGaZnO4-Based Thin Film Transistors Using Room-Temperature Grown Mg2Hf5O12 Gate Insulator Journal of The Electrochemical Society. ,vol. 157, pp. 964- 968 ,(2010) , 10.1149/1.3465656
J. B. Kim, C. Fuentes-Hernandez, B. Kippelen, High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator Applied Physics Letters. ,vol. 93, pp. 242111- ,(2008) , 10.1063/1.3054335
Il-Doo Kim, Mi-Hwa Lim, KyongTae Kang, Ho-Gi Kim, Si-Young Choi, Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering Applied Physics Letters. ,vol. 89, pp. 022905- ,(2006) , 10.1063/1.2220485
M.-H. Cho, D.-H. Ko, Y. G. Choi, K. Jeong, I. W. Lyo, D. Y. Noh, H. J. Kim, C. N. Whang, Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 19, pp. 192- 199 ,(2001) , 10.1116/1.1331296
L. Zhang, J. Li, X. W. Zhang, X. Y. Jiang, Z. L. Zhang, High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature Applied Physics Letters. ,vol. 95, pp. 072112- ,(2009) , 10.1063/1.3206917
Mi-Hwa Lim, KyongTae Kang, Ho-Gi Kim, Il-Doo Kim, YongWoo Choi, Harry L. Tuller, Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors Applied Physics Letters. ,vol. 89, pp. 202908- ,(2006) , 10.1063/1.2387985
KyongTae Kang, Mi-Hwa Lim, Ho-Gi Kim, Il-Doo Kim, Jae-Min Hong, High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates Applied Physics Letters. ,vol. 90, pp. 043502- ,(2007) , 10.1063/1.2434150