Electrical modification of a conductive polymer using a scanning probe microscope
作者： Takahito Ono , Shinya Yoshida , Masayoshi Esashi
DOI: 10.1088/0957-4484/14/9/321
关键词:
摘要: We have demonstrated the electrical modification of a conductive polymer for data storage using scanning probe microscope (SPM). A blend polyaniline and polymethyl-methacrylate as was spun on silicon substrate to make test specimen. The tip SPM placed in contact with carried out by applying voltage between polymer. conductance image simultaneous topographic were taken SPM. It found that conductivity decreased more than 20 times this modification. Measurement shows no obvious change surface topography modified area. I–V characteristics suggests chemical reaction occurred at an applied about 3.2 V.
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H. Kado, T. Tohda, NANOMETER-SCALE RECORDING ON CHALCOGENIDE FILMS WITH AN ATOMIC FORCE MICROSCOPE Applied Physics Letters. ,vol. 66, pp. 2961- 2962 ,(1995) , 10.1063/1.114243
Mark S. Wrighton, Jeffrey M. Bolts, Andrew B. Bocarsly, Michael C. Palazzotto, Erick G. Walton, Stabilization of n‐type semiconductors to photoanodic dissolution: II–VI and III–V compound semiconductors and recent results for n‐type silicon Journal of Vacuum Science and Technology. ,vol. 15, pp. 1429- 1435 ,(1978) , 10.1116/1.569801
L. P. Ma, W. J. Yang, S. S. Xie, S. J. Pang, Ultrahigh density data storage from local polymerization by a scanning tunneling microscope Applied Physics Letters. ,vol. 73, pp. 3303- 3305 ,(1998) , 10.1063/1.122752
C.Y. Yang, Y. Cao, Paul Smith, A.J. Heeger, Morphology of conductive, solution-processed blends of polyaniline and poly(methyl methacrylate) Synthetic Metals. ,vol. 53, pp. 293- 301 ,(1993) , 10.1016/0379-6779(93)91098-M
Y. Martin, S. Rishton, H. K. Wickramasinghe, Optical data storage read out at 256 Gbits/in. 2 Applied Physics Letters. ,vol. 71, pp. 1- 3 ,(1997) , 10.1063/1.119458
K. Takimoto, Writing and reading bit arrays for information storage using conductance change of a Langmuir–Blodgett film induced by scanning tunneling microscopy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 15, pp. 1429- 1431 ,(1997) , 10.1116/1.589466
P. Rannou, M. Nechtschein, J.P. Travers, D. Berner, A. Woher, D. Djurado, Ageing of PANI: chemical, structural and transport consequences Synthetic Metals. ,vol. 101, pp. 734- 737 ,(1999) , 10.1016/S0379-6779(98)00207-0
P. Vettiger, J. Brugger, M. Despont, U. Drechsler, U. Dürig, W. Häberle, M. Lutwyche, H. Rothuizen, R. Stutz, R. Widmer, G. Binnig, Ultrahigh density, high-data-rate NEMS-based AFM data storage system Microelectronic Engineering. ,vol. 46, pp. 11- 17 ,(1999) , 10.1016/S0167-9317(99)00006-4
Dong-Weon Lee, T. Ono, T. Abe, M. Esashi, Microprobe array with electrical interconnection for thermal imaging and data storage IEEE\/ASME Journal of Microelectromechanical Systems. ,vol. 11, pp. 215- 221 ,(2002) , 10.1109/JMEMS.2002.1007400
R Bennewitz, J N Crain, A Kirakosian, J-L Lin, J L McChesney, D Y Petrovykh, F J Himpsel, Atomic scale memory at a silicon surface Nanotechnology. ,vol. 13, pp. 499- 502 ,(2002) , 10.1088/0957-4484/13/4/312