Contribution of defect on early stage of LIPSS formation
作者： Hisashi Shimizu , Shuhei Yada , Go Obara , Mitsuhiro Terakawa
DOI: 10.1364/OE.22.017990
关键词:
摘要: We investigated an early stage of laser-induced periodic surface structure (LIPSS) formation to elucidate the contribution defects on formation. 4H-SiC crystals were irradiated by multiple pulses femtosecond laser with different spot sizes. observed decrease in thresholds high-spatial-frequency LIPSS (HSFL) and low-spatial-frequency (LSFL) increased size. For smaller size, HSFL was only formed at periphery LSFL area, whereas for larger randomly distributed within spot. Our results are coincident hypothesis that existence crystal contributes LIPSS, which electron excitation via one or two photon absorption a defect site cause local nanoablation fluence under intrinsic ablation threshold, followed nanovoid, act as scatterer, interference scattered wave lead
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