Atomic force microscope measurement process for dense photoresist patterns

摘要: Accurate measurement of the sidewalls photoresist features formed on a semiconductor substrate is achieved by double mask exposure process. This allows probing closely spaced with probe tip an atomic force microscope, in spite small (submicron) physical dimensions involved. First conventional line/space pattern exposed onto using desired mask. Then second made which has special space to effectively remove already along at least one side previously features. Hence, that feature clear any adjoining when then developed after two exposures. easy access sidewall tilting microscope. characteristics, including for instance angle, curvature and artifacts present.