作者: Arthur L. Palisoc , Chin C. Lee
DOI: 10.1063/1.341442
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摘要: Using the double Fourier integral transform method, analytical temperature solutions to single‐layer and multilayer structures with infinite lateral dimensions have been derived. For structure, dependence of thermal conductivity has taken into account using Kirchhoff transformation. The use discrete rectangular heat sources rather than circular on top surface structure makes this model particularly useful for analysis common solid‐state integrated circuit devices packages. studying properties a large class device geometries, can be utilized approximate actual reasonable accuracy. general geometries which employed represent are determined. Compared where finite extent chip is considered, present much more computationally efficient ca...