Novel etch process to tune crater size on magnetron sputtered ZnO:Al

摘要: Magnetron sputtered aluminum-doped zinc oxide (ZnO:Al) is used as a window layer in silicon-based thin-film solar cells due to its high transparency, conductivity, and ability provide effective light trapping after etching dilute HCl solution. A challenge with this method the strong influence of sputtering conditions on density shape ZnO:Al etch features. Here we present novel chemical process based HF that enables modification surface features through itself, thus allowing separate optimization deposition texturization. The different characteristics are studied single crystal ZnO. Using effectively texturize polycrystalline films which previously exhibited only poor silicon cells. improvement seen by an 18% increase short circuit current when microcrystalline Additionally, using mixtures able tune feature size given sample. Scanning electron microscope images high-rate deposited etched HF.