作者: Mukta Shaji Farooq , Suryanarayana Kaja , Eric Daniel Perfecto , George Eugene White
DOI:
关键词: Materials science 、 Electrical interconnect 、 Single layer 、 Copper 、 Nanotechnology 、 Interconnection
摘要: The present invention relates generally to a new structure and method for capped copper electrical interconnects. More particularly, the encompasses novel in which one or more of interconnects within semiconductor substrate are obtain robust interconnect structure. A obtaining such is also disclosed. These can be single layer multi-layer structures. Similarly, that being itself composed multi-layered material.