Apparatus for dry etching
作者： Kohsaku Yano , Tetsuya Ueda
DOI:
关键词: Etching (microfabrication) 、 Structural engineering 、 Composite material 、 Dry etching 、 Circumference 、 Perpendicular 、 Reactive gas 、 Substrate (printing) 、 Rotor (electric) 、 Materials science
摘要: An apparatus for dry etching, which comprises a stage supporting substrate, rotor having center shaft, the and an arm connecting to driving means turning at shaft as in direction tangential circumference of circle established by surface substrate center, being housed chamber, can make uniform perpendicular submicron etching with radicals or reactive gas without using ions damages on substrate.
lens.org 参考文章(12)
Valluri R. M. Rao, William Baerg, Etch-back apparatus for integrated circuit failure analysis ,(1988)
Kaoru Shinbara, Wafer holding mechanism ,(1987)
MW Geis, NN Efremow, GA Lincoln, Hot jet etching of GaAs and Si Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 315- 317 ,(1986) , 10.1116/1.583321
D. E. Ibbotson, J. A. Mucha, D. L. Flamm, J. M. Cook, Plasmaless dry etching of silicon with fluorine‐containing compounds Journal of Applied Physics. ,vol. 56, pp. 2939- 2942 ,(1984) , 10.1063/1.333834
Keizo Suzuki, Susumu Hiraoka, Shigeru Nishimatsu, Anisotropic etching of polycrystalline silicon with a hot Cl2molecular beam Journal of Applied Physics. ,vol. 64, pp. 3697- 3705 ,(1988) , 10.1063/1.341413
John Zajac, Plasma etching apparatus II-conical-shaped projection ,(1979)
Yasushi Kondo, Kenichi Ishii, Eita Kinoshita, Yutaka Hayashi, Method of gas reaction process control ,(1989)
Ken Ninomiya, Shigeru Nishimatsu, Keizo Suzuki, Sadayuki Okudaira, Dry-processing apparatus ,(1985)
William D. Westwood, Robert G. Poulsen, Gerald M. Smith, End point control in plasma etching ,(1983)
Yoshihide Endo, Hitoshi Ogi, Apparatus for dry-etching and chemical vapor-phase growth of semiconductor wafer ,(1984)