Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate
作者： C.O. Chui , H. Kim , P.C. McIntyre , K.C. Saraswat
关键词: Optoelectronics 、 Atomic layer deposition 、 Gate dielectric 、 Metal gate 、 Germanium 、 Capacitor 、 Kappa 、 Dielectric 、 Leakage (electronics) 、 Materials science 、 Electronic engineering
摘要: In this letter, we present the use of atomic layer deposition (ALD) for high-/spl kappa/ gate dielectric formation in Ge MOS devices. Different surface cleaning methods prior to ALD have been evaluated together with effects on inserting a oxynitride (GeO/sub x/N/sub y/) interlayer between and substrate. By incorporating thin GeO/sub y/ interlayer, demonstrated excellent capacitors very small capacitance-voltage hysteresis low leakage. Physical characterization has also done further investigate quality interlayer.
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