作者: L. Rissanen , P. Schaaf , M. Neubauer , K.-P. Lieb , J. Keinonen
DOI: 10.1016/S0169-4332(98)00404-8
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摘要: Abstract FeNy films with a nitrogen content of nearly 50 at.% (y≈1) were prepared by reactive magnetron sputtering. Their properties studied as function several sputtering parameters (gas-flow rates, substrate temperature and bias voltage), using ion-beam analytical methods, Mossbauer spectroscopy well transmission electron microscopy (TEM) X-ray diffraction (XRD). In order to highlight the role light contaminant elements (H,C,O) in production single-phase cubic FeN films, concentration profiles all measured Time Flight Elastic Recoil Detection Analysis (TOF-ERDA).